We have a core team with solid hands on experience in GaN-on-Si technology and manufacturing, and also work with leading R&D institutions to manufacture a wide variety of GaN wafers for different application uses.
GaN-on-Si Wafer Fab Process
GaN devices enable greater power integration than silicon ICs and it can improve the efficiency and reduce the cost of electrical converters. Due to its intrinsic properties and superior characteristics, GaN is gaining momentum in power conversion applications in automobiles, electrical vehicle charging stations, servers, and industrial systems.
It allows discrete devices, such as FETs and Schottky diodes to operate at higher voltages efficiently. Early adopters are the medium voltage power electronics market which is between 600V to 900V. Some are pushing it up 1200V. While others have transformed devices rated at 200V and below. It is highly expected that Si based power devices will be replaced with GaN devices for reduced switching losses, increased efficiency, and improved temperature performance.
Some IDM have developed RF devices with GaN technology for high breakdown strength, low noise figure and high linearity. With the increasing usage of this ideal wideband gap semiconductor, IGaN is well positioned to enable the quick adoption of GaN-on-Si technology for Power and RF companies through its proprietary technologies in epitaxy growth as well as 200mm CMOS-compatible wafer fabrication.
