We will offer a variety of deposition processes and various films with wafer of research and development applications involved in the semiconductor manufacturing process.

Rich processing menu of specialized manufacturer unique will meet the various needs of customers.

In addition, its own super-thick thermal oxide film formation technology is the material that is essential

to the optical device to support the optical communication.

Our products and technologies have been adopted to communication equipment

manufacturers and optical component manufacturers worldwide.

>Thick film applications here

Process Line-up

Type Method Film Type
Thermal Oxide Thermal Oxidation Thin thermal oxide film
Super-thick thermal oxide film
LP-CVD LP-SiO2
HTO
LP-TEOS
PE-CVD PE-SiO2
PE-TEOS
HDP
Low-k(BD、BDⅡ、AURORA、CORAL)
PSG
NSG
BPSG
Spin-coated SOG
Annealing oven RTO
Nitride LP-CVD LP-SiN
PE-CVD PE-SiN
Si LP-CVD Poly-Si
Amorphous-Si
Organic Spin-coated G-Line resist
I-Line resist
KrF resist
ArF resist
Polyimide(Photosensitive、Non-Photosensitive)
Metal Sputter Al、Al-Si、Al-Si-Cu、Al-Cu
Ti、TiN
Ta、TaN
Cr
Cu
W
Ni
Au
Pt
ITO
Plating Ti、Ni、Au、Cu
CVD W-Si

※There are also things that can’t be processed by the wafer size.

※In addition, because the other films can also, please say a hope. Please contact us for details.

Our Clean Room
creen02

Process Service

“Super-thick thermal oxide film” applications

Undercladding wafer for AWG

With respect to optical waveguides (AWG), the so-called undercladding layer, which is the lowermost SiO2 film, has a critical effect on the process yield.The Super-thick thermal oxidized films of KST World have the leading share of the global market thanks to their excellent surface cleanliness and stable film quality.

Guaranteed specifications

Item Specification
Film thickness 20um±5%(Maximum thickness)
In-plane uniformity ±0.5%
Surface uniformity ±0.5%
Refractive index(@1550nm) 1.4458±0.0001

Standard product line-up

Size Wafer thickness Thermal oxidized film thickness
4 inches 525um 1mm 15um、20um
6 inches 625um 675um 1mm 15um、20um
8 inches 725um 15um、20um
12 inches 775um 15um

※The above wafer size and thickness, are described our standard products.

※Other sizes and thicknesses are also available. (Up to a maximum thickness of 30μm)

Refractive index plane distribution data

屈折率面内分布データ

Surface roughness data

表面粗さデータ

Sales of Semiconductor Wafers

We Sales of semiconductor wafers

has a global network for supplying silicon wafers, quartz wafers, compound wafers, and glass substrates to meet the needs of customers. We can also supply tailor-made products. We proposes the most cost-effective products depending on the customer’s application. The silicon wafers, which we use for our own products too, inspected in the clean room. Custmers can rely on the substrate materials we supply.

 

Silicon Wafers

-Silicon Wafers-

For semiconductor and for optical communication, offers as various other product applications. Size and process, you can offer a product that is tailored to your needs, such as the surface orientation and thickness.

  • Monitor wafer
  • Dummy grade wafer
  • Epitaxial wafer
Grass

-Glass Substrates-

We offer a variety of glass substrates combined with the shape you wish.

  • Blue plate glass (soda glass)
  • Borosilicate glass
  • SCHOTT Inc. TEMPAX Float, CORNING, Inc. PYREX
  • White plate glass  SCHOTT Inc. B270, BK7
  • Alkali-free glass  CORNING Inc. EAGLE XG
Various composite substrate

-Various composite substrate-

We, SOQ substrate (Silicon on Quartz), have been made the handling of SOS substrate (Silicon on Sapphire).
Silicon photonics, optoelectronics, be applied to applications such as RF device is expected.
SOQ, also because it responds to the consultation for composite materials other than SOS board, do not hesitate to contact us.

 

Ion Implantation Services

We can meet widely ranging requirements for ion implantation with various ion implanters and offer analysis services with various analysis devices.

Ion implantation services

Dopant elements N、C、F、P、As、B、Ge、Si、Sb、In、O、H、etc
Acceleration energy 200eV ~ 4.6MeV

※ Constraints of size of wafer may be imposed depending on the measureing equipment.

Analyze services

Sheet resistance measurement, crystal fault detection, surface impurities analysis,

impurities profile analysis, minor constituent analysis, and film thickness measurement

※ Constraints may be imposed depending on the type of ion and size of wafer.

Major facilities

Devices Type Manufacturers
High current ion implanter LEX3 SEN Corporation
High current ion implanter LEX SEN Corporation
High current ion implanter NV-GDSⅢ-LED SEN Corporation
High current ion implanter NV-GSD-HC3 SEN Corporation
Medium current ion implanter MC3シリーズ SEN Corporation
High energy ion implanter NV-GSD-HE3 SEN Corporation
High energy ion implanter NV-GSD-HE SEN Corporation
Wafer surface inspection device LS-6800 Hitachi High-Technologies Corporation
TXRF analyzer TREX630 Technos Co., Ltd.
ICP-MS Agilent 7500CS Yokogawa Analytical Systems, Inc.
Wafer review SEM (EDS analysis) RS-3000 Hitachi High-Technologies Corporation
Scanning electron microscope (EDS analysis) JSM-5800LV JEOL Ltd.
Sheet resistance measuring equipment RS-100 KLA-Tencor Corporation
TW measuring equipment TP630 KLA-Tencor Corporation

Film thickness measuring device –spectroscopic ellipsometer

UT-300 HORIBA, Ltd.
RTP SUMMIT 300XT Axcelis Technologies
RTP Reliance850 Axcelis Technologies
Vertical furnace VF-1000 Koyo Thermo Systems Co., Ltd.

 

Our Equipment

SOI Wafer of SEIREN KST

SOI Wafer

SOI(Silicon on Insulator)Wafer is a silicon wafer which is a structured single crystalized layer on oxidized layer and used in the field of high speed LSI, low power LSI, powerdevice, MEMS.

Except for normal SOI, we provide special SOI wafer such as Cavity SOI wafer or Thick BOX SOI wafer.

Cavity SOI will be a good performance on reducing process steps or yield loss, and this would be the possibility for reducing huge cost cutting.

Also, Thick BOX SOI wafer is made by KST’s unique super thick thermal oxidized layer technique which has never been existed before, and possible to make silicon photonics, or super high resistivity powerdevice in the world.

Capability

Size 6” 8”
Device layer thickness 100nm※~200μm
Wafer in Wafer thickness accuracy Thin layer ±15nm Thick layer ±0.5μm
BOXlayer thickness Maximum 20μm

Files