Seen Semiconductors

Seen Semiconductors is a provider of customized epitaxy semiconductor structures. Our wafers are used worldwide by R&D laboratories and producers of modern electronic and optoelectronic devices.

Thanks to the 20-year experience of the epitaxial growers that we cooperate with our structures are of very high quality and thus could be used by our clients as semi-products in the process of attaining the final product or research goal. This could significantly diminish their time, effort and costs. Our very comprehensive offer also allows our clients to conduct sophisticated comparative studies.

Our offer consists of high quality heteroepitaxial structures grown on sappire, SiC, silicon, InP, GaAs as well as homoepitaxial AlInGaN structures on bulk GaN. We are proud to offer structures of record low dislocation density parameters (EPD).

We have access to the best quality GaN in the world with dislocation density of 104/cm2, both n-type and Semi-Insulating type (resistivity 109 – 1012 Ωcm). Our substantial experience in working with the above GaN alows us to offer:

very high quality epi-ready homoepitaxial GaN templates on GaN – our experience shows that many growers appreciate working with epi-ready homoepitaxial templates GaN on GaN – as such structures, as opposed to stand-alone substrates, allow for true inspection of nitride substrates, as well as a good predictibility and control for further epitaxial growth,
complete epitaxial structures of high brightness light emitting diodes, lasers, and high electron mobility transistors of the highest world standard parameters,
all combinations of InAlGaN structures and devices on bulk GaN.

Our list of rare products includes:

GaN on silicon
graphene epitaxy on SiC substrate
HEMTs on bulk GaN

Epitaxial GaN Structures on Sapphire (2″, 3", 4" wafers)
Reference Specification Min. Quantity E-mail info
undoped GaN
GaN layer thickness up to 8um on sapphire

1 Order
n-type GaN
GaN layer thickness up to 8um on sapphire

1 Order
p-type GaN
GaN layer thickness up to 1.5um on sapphire

1 Order
semi-insulating GaN
GaN layer thickness up to 4um on sapphire

1 Order
HEMT structures
HEMT structure on sapphire

1 Order
LED structures
LED structure (390-450nm wavelength) on sapphire

1 Order
a-plane GaN
a-plane GaN on r-plane sapphire

1   Order
Epitaxial GaN Structures on bulk GaN (1″, 2″ wafers)
Reference   Specification   Min. Quantity   E-mail info
n-type GaN
GaN on bulk GaN

1 Order
p-type GaN
GaN on bulk GaN

1 Order
semi-insulating GaN
GaN on bulk GaN

1 Order
LED strutures
LED structures (390nm-450nm wavelength) on bulk GaN

1 Order
HEMT structures
HEMT structure on semi-insulating bulk GaN

1   Order
Epitaxial GaN Structures on SiC (2″, 3", 4" wafers)
Reference   Specification   Min. Quantity   E-mail info
n-type GaN
GaN on n-type or semi-insulating SiC

1 Order
p-type GaN
GaN on n-type or semi-insulating SiC

1 Order
semi-insulating GaN
GaN on n-type or semi-insulating SiC

1   Order
Epitaxial GaN Structures on Silicon (2″, 3", 4" wafers)
Reference   Specification   Min. Quantity   E-mail info
undoped GaN
up to 1.2um GaN on Silicon substrate (111)

1   Order
Epitaxial SiC Structures on SiC (2″, 3", 4" wafers)
Reference   Specification   Min. Quantity   E-mail info
n-type SiC on SiC
n-type SiC layer (doped with Nitrogen)

1 Order
p-type SiC on SiC
p-type SiC layer (doped with Aluminium)

1 Order
undoped SiC on SiC
undoped SiC layer

1 Order
Schottky diode
Schottky diode structure

1 Order
PIN diode
PIN diode structure

1 Order
JFET
JFET structure

1 Order
MISFET
MISFET structure

1   Order
Epitaxial AlN Structures on SiC (2″, 3", 4" wafers)
Reference   Specification   Min. Quantity   E-mail info
undoped AlN on SiC
undoped AlN on SiC

1   Order
Epitaxial Graphene on SiC Structures (up to 20mm x 20mm wafers)
Reference   Specification   Min. Quantity   E-mail info
Graphene
Graphene on n-type SiC

1 Order
Graphene
Graphene on semi-insuling SiC

1   Order
Epitaxial InAlGaAs Structures on GaAs (2″, 3", 4" wafers)
Reference   Specification   Min. Quantity   E-mail info
GaAs on GaAs
n-type, p-type and semi-insulating GaAs on GaAs

1 Order
InGaAsP/GaAs
InGaAsP/GaAs (typically latice-matched)

1 Order
AlAs/GaAs
AlAs/GaAs

1 Order
InAs/GaAs quantum dots
InAs/GaAs quantum dots

1 Order
GaAsP
GaAsP (typically strained)

1 Order
InGaAlP
InGaAlP (typically latice-matched)

1 Order
InGaP/GaAs
InGaP/GaAs (typically latice-matched)

1 Order
AlGaAs/GaAs QW
AlGaAs/GaAs QW edge emitting lasers (680 - 870nm)

1 Order
AlGaAs/GaAs VCSELs
AlGaAs/GaAs VCSELs

1 Order
AlGaAs/GaAs HEMTs
AlGaAs/GaAs HEMTs

1 Order
AlGaAs/GaAs varactors
AlGaAs/GaAs varactors

1 Order
GaAsP/GaAs lasers
GaAsP/GaAs strained QW edge emitting lasers

1 Order
InGaAsP/GaAs lasers
InGaAsP/GaAs QW lasers 808nm

1 Order
InGaAs/AlGaAs/GaAs lasers
InGaAs/AlGaAs/GaAs strained QW lasers 800-1000nm

1 Order
InGaAs/GaAs QD lasers
InGaAs/GaAs and InAs/GaAs QD lasers

1 Order
AlGaAs/GaAs waveguides
AlGaAs/GaAs passive waveguides

1   Order
Epitaxial InAlGaAsP Structures on InP (2″, 3", 4" wafers)
Reference   Specification   Min. Quantity   E-mail info
InP on InP
n-type, p-type and undoped InP on InP

1 Order
InGaAs/InP
InGaAs/InP (typically latice-matched)

1 Order
InGaAsP/InP
InGaAsP/InP passive devices

1 Order
InAlAs/InP
InAlAs/InP (typically latice-matched)

1 Order
InAlGaAs/InP
InAlGaAs/InP (typically latice-matched)

1 Order
InGaAsP/InP QW lasers
InGaAsP/InP QW edge emitting lasers and SOAs 1300-1600nm

1 Order
InGaAs/InP lasers 1550nm
InGaAs/InP edge emitting lasers 1550nm

1 Order
InGaAsP/InP VCSEL
InGaAsP/InP VCSEL structures

1 Order
InAlGaAs/InP VCSEL
InAlGaAs/InP edge emitting and VCSEL structures

1 Order
InGaAsP/InP
InGaAsP/InP (typically latice-matched)

1 Order
InP - based photodetectors
InP - based photodetectors

1 Order
InAlAs/InGaAs/InP HEMTs
InAlAs/InGaAs/InP HEMTs

1 Order