Materials for semiconductor manufacturing process
Materials such as polymer (Resin), photoresist (PAG), and additives, and materials such as Resin for SOC, Resin for BARC, and Acid Generators, which are essential for the next-generation semiconductor process

Materials for Photoresist
Materials such as polymer (Resin), photoresist (PAG), and additives as photosensitive materials used in the exposure process, which is a key process of semiconductor pattern formation (photolithography)

Resin for KrF : Various polymers based on polyhydroxy styrene
Polymer Mw : 10,000 ~ 20,000
Resin for i-Line, ArF resist
Additive: Quenchers and additives used in semiconductor processing and other processes
Resin for BARC
Bottom-Anti-Reflective Coating A material that can be coated on the bottom of the photoresist layer to prevent reflection and scattering of light during the photolithography process to improve process margins and realize microcircuits.

Polymer with High RI
Resins for KrF BARC or ArF BARC
Resin for SOC
Spin-on-Carbon. It is a hardmask process to supplement the etch resistance of the thin PR layer as the line width of semiconductors narrows, and is an essential material for next-generation semiconductor processes.

Oligomeric phenol derivatives
Monomolecular or polymer with excellent etching resistance and planarization properties
Acid Generators
PAG (Photo-acidgenerator): ArF, KrF, i-line acid generator that responds to light, various product groups (Sulfonium, loonium, Oxime series, etc.)
TAG (Thermal-acid generator): acid generator generated by heat, product lineup with various decomposition temperatures, and materials suitable for other purposes can be synthesized (Tdec 130~220℃)
Photo-acid generator (PAG)
Thermal-acid generator (TAG)