Mid to small-sized LCD equipment, semiconductor processing equipment for 300mm wafers, and large-sized LCDs, and are currently leading the fields of ELA (Excimer Laser Annealing), LLO (Laser Lift-Off), and OLED Encapsulation, which are the laser equipment necessary for the production of OLED panels. We will continue to grow as a world-renowned total equipment company through endless development based on Top Spirit, Professional Spirit, and Venture Spirit.

APS R&D Center
AP Systems is concentrating on developing core processing technology and facilities for the manufacturing of Flexible AMOLED, which is predicted to form a vast market, and pushing hard for the R&D to maintain its number 1 place in the global market shares in the related field.
AP Systems has developed core equipment for the display and semiconductor manufacturing process based on laser applied technology, heat treatment technology, modules, and plasma applied technology, and is providing them to the client companies.

Laser  Application  Technology
Annealing equipment is used to crystalize a-Si into p-Si in the AMOLED process, and also used to separate glass boards by coating with polyimide (PI) to form a film on the glass board in the Flexible OLED process.
Micromachining equipment is laser process equipment that can manufacture Fine Metal Mask using materials, and can realize patterns up to UHD (Ultra-HD) level.
Cutting equipment is used to cut glass and the board of the flexible display.
Excimer Laser Annealing
Laser Lift-Off
Fine Metal Micro-machining
Glass Laser Scribing In-line System
Film Laser Cutting
Excimer Laser AnnealingLaser Lift-OffFine Metal Micro-machiningGlass Laser Scribing In-line SystemFilm Laser Cutting
Excimer Laser Annealing
It is a laser thermal process system designed for Low Temperature Poly Silicon Crystallization (LTPS). We have integrated world-class laser, optics technology, and chamber technology to form high quality LTPS TFT (Thin Film Transistor). It is applied in AMOLED backplane and LTPS LCD fields.
Irradiate Excimer Laser on the TFT board with a-Si film to form Poly-Si film.
Laser Type    Excimer Laser
Laser Wavelength    308nm (XeCl)
Laser Repetition Rate    600Hz
Laser Pulse Energy    1J, 2J, 4J
Laser Uniformity    Long Axis (2σ): ≤ 1.8% (@96%)
Short axis (2σ): ≤ 3.0% (@96%)
Stage Type    Single Plane or Stack Plane
Stage Position accuracy    X axis: <±2um
Y axis: <±2um
Process Environment    ATM & N2 Atmosphere
Software    Easy Cluster™
Safety Certification    CE, SEMI, S-Mark

Thermal Process Technology
We provide rapid thermal process equipment, the core equipment in the entire process of semiconductors, to the client companies.
Rapid Thermal Processing (RTP) equipment, which treats wafers with high temperature in a short time using tungsten halogen lamps, is applied to the oxidation process.
Rapid Thermal Process
Halogen lamp
Rapid Thermal Process
The advantage of RTP is the ability to heat or cool rapidly, which raises or lowers the temperature quickly, so cost of thermal process can be greatly reduced. AP Systems’ RTP equipment provides excellent temperature uniformity, wafer rotation, emissivity compensation, and intelligent temperature control.
It is a non-contact rotation using magnet properties (Magnetic Levitation), which secures excellent temperature uniformity within the surface.
Spec Items    Unit    Specification
Temperature Reading Range    ℃    400 ~ 1250
Temperature Control Range    ℃    435 ~ 1200
Temperature Ramping-Up Rate    ℃/sec    Up: 250℃/sec, Down: -90℃/sec
Process Pressure    Torr    780±2 ~ 1×10-3
RTO Range @ 1100℃, 60sec, X-scan, 49Points, 3 EE    Å, 1σ    ≤±0.5
Rs Range @ 700 ~ 1100℃, X-scan, 81Points, 3 EE    Ω/Sq, 1σ    ≤15
Pyrometer to Pyrometer Peak Temp Uniformity    ℃    Target±1.0℃ @Bare Wafer
RTO/Rs Non-uniformity    %,1σ    RTO: 0.48%, Rs: 0.72%
RTO/Rs Repeatability    %,1σ    ≤1.5%, 1σ
Temp. Stability & Repeatability    ℃    <±1.0℃
Rs WTW Non-Uniformity    %,1σ    <1%, 1σ
Mechanical Throughput (2 Chambers)    WPH    142

Module  Technology
Vacuum assembly equipment, used for ODF (One Drop Filling) and Encapsulation is made into a module and provided to the client companies, and film assembly equipment, used for the semiconductor packaging process (TSV 3D), is also made into a module.
Vacuum Coalescence: Liquid Crystal/Sealant Dispensing, Vacuum Boning, and UV Cure System applied to mass production of LCD/AMOLED display
Film Coalescence: Temporary Bonding and De-Bonding equipment to manufacture semiconductor 3D IC
Vacuum Bonding
One Drop Filling
Encapsulation SystemFilm Bonding
Temporary Bond&
De-Bond Process System
Encapsulation SystemTB System
Encapsulation System
It is a process to seal with Glass to prevent penetration of oxygen and moisture, after all the processes of AMOLED has been progressed. It performs sealant process of large area AMOLED, at least the size of generation 4, and we provide facilities for the entire sealant process, unique in Korea.
After spraying the sealant to draw the shape of outward appearance, and then going through the assembly process of upper board and lower glass board, UV is irradiated to harden the sealant.
Encapsulation System Configuration
Vacuum Assembly Chamber
Seal Dispenser
Fill Dispenser
UV Cure system
N₂Environment Transfer system
Passage Chamber
Getter/Desiccant Dispenser
Block Control system

Plasma  Application  Technology
We possess assembly and etching equipment that is used in semiconductor and display process using plasma.
Semiconductor Field: Plasma Etch and Assembly (PECVD, and Sputter), and Ashing equipment to remove PR
Display Field: TEF Process Equipment
Thin Film Encapsulation
Film structure deposition for the sealant to prevent oxygen and moisture penetration into AMOLED device
It can be applied to maximum size of Generation 6, 2 Partition board
Flexible sealant deposition to realize Flexible, rollable, and foldable display
ALD (Atomic Layer Deposition) of Multi-linear Nozzle
Highly clean film deposition technology through in-situ cleaning and gas flow control technology
Stress control and water vapor permeability optimization technology through multi-layer film design technology
ICP antenna design technology (high density/low damage plasma)
Susceptor design technology (possible to remove polymer at the back side and prevent bending of the wafer)
Pre-Heating (Halogen Lamp) control and process technology
Functional Transfer Robot (Wafer Alignment)
Substrate Loading    Generation 6, 2 Partition, 925mm x 1500 mm
Board Temperature    Max. 90℃
Water Vapor Permeability    < 5e-5 g/m2/day @ 1000Å, SiNx/SiOx multi-layer structure
Film Thickness Uniformity    < 5%
Light Transmittance    > 90% @ all the ranges of visible light
Stress    <±100 MPa



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